Resistor Technology, Capacitor Materials

Resistor Technology
Thin Film Resistors SiCr TaN NiCr
Process High Ohmic, High Voltage, Ultra-stable High process temperature (no diffusion); Resistance to harsh environment Low TCR
Typical Sheet Resistivity (ohm/sq) 300-1300 10-200 5-200
TCR (ppm/°C -25 to 125°C) ±50; 0 to -150 -100 to -150 0 to 100
Stability (Change after 1000 hours @ 125°C) 0.2% 0.2% 0.2%
Maximum Stabilization Temperature (°C) 500 450 350
Recommended Device Environment Ambient Atmosphere Ambient Atmosphere Ambient with Passivation or Inert Atmosphere
Maximum Device Processing Temperature Up to 1 hr. @ 400 °C Up to 1/2 hr. @ 350 °C Up to 1/2 hr. @ 260 °C
Tolerance (the greater of) 0.05% or 0.1 Ω 0.05% or 0.1 Ω 0.05% or 0.1 Ω
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Capacitor Materials
Material SiON SiO2 BCB PI
pF/mm² Typical 55 35 25 30
Range 1-500 pF 1-500 pF 1-50 pF 0.5-10 pF
Trimmable Yes No Yes No
Tolerance;
NOTE: value dependent
≥ 0.5%;
or ≥ 0.05 pF
≥ 0.5%;
or ≥ 0.05 pF
≥ 0.5%;
or ≥ 0.05 pF
20%
Stability ±60 ppm/°C ±30 ppm/°C ±42 ppm/°C ±100 ppm/°C
Rated Voltage ≤ 100 ≤ 100 ≤ 25 ≤ 25
BDV (v/µm) 600 1000 300 200
DF ≤ 0.1% ≤ 0.1% ≤ 0.1% ≤ 0.2%
Performance K 5.8; TCC 60 K 4.0; TCC 30 K 2.7; TCC 42 K 3.3; TCC
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