Typical Substrate Properties, Sputtered and Electroplated Materials, Wafer Construction

Typical Substrate Properties
Properties
Nominal
Al2O3
99.6%
Al2O3
96.0%
Fused
Silica
BeO
99.5%
AIN Glass
Borosilicate
Glass
Ceramic
P-Silicon
Boron
Doped
N++-Silicon
Arsenic
Doped
FZ-Silicon
Arsenic
Doped
Thickness
Range
(mil)
4-50 10-50 4-25 10-60 10-60 20 20 2-25 4-25 4-25
As Fired
(Surface finish)
3μ" No No 6μ" No 10 Â NA
Lapped
(Surface finish) μ"
<20 No No <20 <20 NA
Polished
(Surface finish) μ"
<2 <4 <1 <3 <3 <.04 <0.6 <.04
Dielectric
Constant
@ 10 GHz
9.8 9.6 3.8 6.6 8.7 5.1 NA
Loss
Tangent
@ 10 GHz
0.0002 0.0002 0.0001 0.0003 0.001 0.003 NA
CTE
(PPM/°C)
6.7 8.2 0.5 7.5 4.5 3.2 11.5 2.6
Thermal
Conductivity
(W/mK)
25.5 24.7 1.38 280 170 1.16 2.7 150
Volume
Resistivity
(ohm-cm)
1014 1014 1014 1014 1013 1013 1013 15 0.002 1014
Dielectric
Strength
(KV/mm)
8.7 8.3 100 14 >10 NA
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Sputtered and Electroplated Materials
Materials Sputtered Comment
Al 150-40000 Â AlSi (<1%) and AICu (2%) available, Typical 2000 - 15000
Au 1000-65000 Â Typical 3000 - 10000
Cr 150-5000 Â Typical 600
Cu 2000-65000 Â N/A
LSCO 300-1200 Â Typical 600
Ni(V) 500-10000 Â N/A
Pt 1000-4000 Â Typical 2500
TaN 300-1500 Â Barrier Layer
Ti 500-5000 Â Typical 600
TiW 300-1500 Â Typical 500
Plated Material Electrolytic μgm and (μgin) Electroless μgm and (μgin)
Au 0.5 - 50 (20-2000) 1-10 (40-400)
Cu 5 - 150 (200-6000) 2 - 4 (80-160)
Ni 1.25 - 5 (50-200) N/A
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Wafer Construction Overview

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